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FUJITSU LABORATORIES LIMITED | 論文
- BCI-1-2 長距離大容量光伝送を実現するデジタル受信技術(BCI-1.光通信を支える最新エレクトロニクス技術)
- BCI-1-2 長距離大容量光伝送を実現するデジタル受信技術(BCI-1.光通信を支える最新エレクトロニクス技術,依頼シンポジウム,ソサイエティ企画)
- 偏波多重4値位相変調光送受信機のための制御技術(光変復調,光伝送,波長多重ネットワーク技術,光ノード技術,WDM技術,光LAN技術,光信号処理技術,一般)
- RZ-DQPSK変調器のバイアス制御方式の検討(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))
- RZ-DQPSK変調器のバイアス制御方式の検討(OCS20周年記念,超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))
- 11Gb/s NRZ信号同時伝送下での43Gb/s RZ-DQPSK信号に対する非線型位相雑音の分析(大容量伝送技術,超高速伝送技術,光増幅技術,一般,(OFC報告))
- BS-7-8 高速偏波変動下における40Gb/s RZ-DQPSK方式のPMD耐力(BS-7. 「偏波への挑戦」〜光通信システムにおける現状と課題〜,シンポジウムセッション)
- B-10-95 周波数間隔50 GHz NZ-DSF伝送路における11.1 Gb/s NRZ信号混載時の43 Gb/s SP-RZ-DQPSK信号とDP-RZ-DQPSK信号の伝送特性比較(B-10. 光通信システムB(光通信),一般セッション)
- DQPSK復調器の光位相制御方法の提案と実験的確認((フォトニック)IPネットワーク技術,(光)ノード技術,WDM技術,信号処理技術,一般)
- B-10-52 デジタルコヒーレント受信器におけるAD変換タイミング同期手法の提案と実験的確認(B-10.光通信システムA(線路),一般講演)
- デジタル信号処理技術を用いたコヒーレント受信における位相同期方法に関する検討(光変復調技術,分散補償技術,光品質監視,光信号処理技術,一般)
- デジタルコヒーレント受信におけるレーザ周波数変動特性の影響(光変復調技術,分散補償技術,光品質監視,光信号処理技術,一般)
- Pyrazoline Dimers for Hole Transport Materials in Organic Electroluminescent Devices
- Novel Europium Complex for Electroluminescent Devices with Sharp Red Emission
- Organic Electroluminescent Devices with 8-Hydroxyquinoline Derivative-Metal Complexes as an Emitter
- Blue Electroluminescence in Thin Films of Azomethin-Zinc Complexes
- デジタルコヒーレント伝送システムのための逆伝播型非線形効果補償とその半ブラインド最適化(光変復調方式,多値光変復調,コヒーレント光通信,非線形・偏波問題,分散補償デバイス,光信号処理,光測定器,光通信用ディジタル信号処理,光通信計測,光通信用LSI,誤り訂正,一般)
- BI-4-2 ディジタルコヒーレントによる100Gbps/λ長距離伝送(BI-4.テラビットネットワーク時代の100Gトランスポート技術とアプリケーション,依頼シンポジウム,ソサイエティ企画)
- BCI-1-2 長距離大容量光伝送を実現するデジタル受信技術(BCI-1.光通信を支える最新エレクトロニクス技術,依頼シンポジウム,ソサイエティ企画)
- RZ-DQPSK変調器のバイアス制御方式の検討(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- A Low Power Programmable Turbo Decoder Macro Using the SOVA Algorithm(Low-Power System LSI, IP and Related Technologies)
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
- Clinical efficacy of azithromycin for male nongonococcal urethritis
- Comparison of 1-day, 2-day, and 3-day administration of antimicrobial prophylaxis in radical prostatectomy
- BP-4-3 100Gbpsコヒーレント光伝送技術(BP-4.フォトニックネットワークの将来技術と展望,パネルセッション,ソサイエティ企画)
- Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- B-10-75 112Gbps偏波多重QPSKセミリアルタイム光受信器の開発(B-10.光通信システムB(光通信方式,光通信機器,デバイスのシステム応用,光通信網・規格),一般セッション)
- B-10-79 112Gbit/s DP-QPSK信号のイントラダイン受信における光源依存性(B-10.光通信システムB(光通信),一般セッション)
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- A Novel Technique for Monitoring the Reproducibility of Laser Tape-Target Interactions Using an X-ray Pinhole Camera
- B-10-73 Phase synchronization in Optical Coherent Detection with Digital Signal Processing(B-10.光通信システムB(光通信),一般講演)
- Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
- Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
- Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
- InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
- Proton-induced Nuclear Reactions Using Compact High-Contrast High-Intensity Laser
- Investigation of Degradation model for Ultra-thin Gate Dielectrics
- Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- High Luminance in Organic Electroluminescent Devices with Bis(10-hydroxybenzo[h]quinolinato)beryllium as an Emitter
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Reply to the Comment by H.L. Stormer
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
- Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
- Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Foxo3a expression and acetylation regulate cancer cell growth and sensitivity to cisplatin
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- 60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model
- 60-GHz HEMT-Based MMIC One-Chip Receiver
- Riemann zeta function and the best constants of five series of Sobolev inequalities (Expansion of Integrable Systems)
- THE BEST CONSTANT OF SOBOLEV INEQUALITY WHICH CORRESPONDS TO SCHRODINGER OPERATOR WITH DIRAC DELTA POTENTIAL
- THE BEST CONSTANT OF SOBOLEV INEQUALITY CORRESPONDING TO DIRICHLET BOUNDARY VALUE PROBLEM FOR (-1)^ M(d/dx)^
- HEAVISIDE CABLE, THOMSON CABLE AND THE BEST CONSTANT OF A SOBOLEV-TYPE INEQUALITY
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source
- Si_2H_6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
- A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
- Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
- Photoacoustic EXAFS of Solid Phase
- Pharyngeal Neisseria gonorrhoeae detection in oral-throat wash specimens of male patients with urethritis
- Gatifloxacin treatment for chronic prostatitis : a prospective multicenter clinical trial
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
- Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse
- (Ba, Sr)TiO_3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond
- Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- High-Speed Modulation with Low-Threshold 1.3μm-Wavelength MQW Laser Diodes
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
- Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
- Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
- Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
- Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
- Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
- Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
- Synchrotron Radiation Section Topography with Extremely High-Order Reflection and Its Application to the Characterization of MCZ-Silicon Crystals
- Measurement and Analysis of the Static Debye-Waller Factor of Cz-Silicon with Small Oxygen Precipitates : Techniques, Instrumentations and Measurement
- Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellosung Fringe Method
- Isolator-Free DFB-LD Module with TEC Control Using Silicon Waferboard
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Recording Power Characteristics of 130mm Overwritable MO Disk by Laser Power Modulation Method
- Direct Overwrite by Light Power Modulation on Magneto-Optical Multi-Layered Media : DRIVE TECHNIQUE
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Preparation and Electrical Properties of Rhombohedral Pb(Zr_xTi_)O_3 Thin Films by RF Magnetron Sputtering Method
- Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
- Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation
- Magnetic, Optical and Microwave Properties of Rare-Earth-Substituted Fibrous Yttrium Iron Garnet Single Crystals Grown by Floating Zone Method
- Growth and Optical Properties of Ce-Substituted Fibrous YIG Single Crystals
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Optimum Recording Conditions of Direct Overwrite Magneto-Optical Disk Drive for the Widest Power Margin
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- Modeling Thermal Diffusion of Scanned and Focused Laser Power on Direct Overwrite Magneto-Optical Disk
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure in the Normal State
- Dielectric Properties of SrTiO_3 Epitaxial Film and Their Application to Measurement of Work Function of YBa_2Cu_3O_y Epitaxial Film
- Analysis on Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure
- Metal-Insulator-Superconductor Field-Effect-Transistor Using SrTiO_3/YBa_2Cu_3O_y Heteroepitaxial Films
- Epitaxial SrTiO_3 Thin Films Grown by ArF Excimer Laser Deposition
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Fabrication of a New Pyroelectric Infrared Sensor Using MgO Surface Micromachining
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- A New Type GaAlAs Monolithic Lensed LED : B-2: GaAs FET/LED AND DETECTOR
- Modeling Thermal Effects for Simulation of Post Exposure Baking (PEB) Process in Positive Photoresist
- High Electron Mobility Transistor Logic
- Monte Carlo Simulation of Gunn Domain Formations
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
- Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
- Substrate Bias Effect on Ion-Implanted GaAs MESFETs
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
- Liquid Phase Epitaxial Growth of In_Ga_xP
- Electrical Properties of n-Type Gallium Arsenide at High Temperatures
- Hot Electron Effect in Short n^+nn^ GaAs
- Photoluminescence Study of Carbon Doped Gallium Arsenide
- Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
- GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
- Enhancement-Mode High Electron Mobility Transistors for Logic Applications
- An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology : B-5: GaAs IC
- The Edge Overgrowth in Selective Deposition of GaAs
- Chemical Etching of Germanium with H_3PO_4-H_2O_2-H_2O Solution
- Ten-Year Overview and Future Prospects of Write-Once Organic Recordable Media
- Approach for High Speed Recording of 4.7GB Digital Versatile Disc-Recordable
- Growth of K_3Li_Nb_O_ Single-Crystal Fibers
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Simulation of Mode Selectability Characteristics by Phase Constraint in a Bare Coordinate-Transforming Cavity
- Continuous Wavelength Sweep of External Cavity 630 nm Laser Diode without Antireflection Coating on Output Facet
- Coordinate-Transformed and Self-Reproducible Complex Amplitudes Inside Laser Cavities
- A 350MHz 5.6GOPS / 1.4GFLOPS 4-Way VLIW Embedded Microprocessor (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
- Two-Dimensional 4 × 4 Optical Fiber Array Applied to a Monolithic LED Array
- Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
- In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
- GIAMBELLI'S FORMULA AND THE BEST CONSTANT OF SOBOLEV INEQUALITY IN ONE DIMENSIONAL EUCLIDEAN SPACE
- Clinical relevance of single administration of prophylactic antimicrobial agents against febrile events after removal of ureteral stents for patients with urinary diversion or reconstruction
- Efficacy of treatment with carbapenems and third-generation cephalosporins for patients with febrile complicated pyelonephritis
- Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
- High Optical Efficiency Integrated Head for Use in Magneto-Optical Disk Drive
- TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
- 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk
- C/N Improvement of Direct Overwrite Magneto-Optical Disk by Adding a GdFeCo Readout Layer : Media
- High Activation of Ga at Low Temperatures
- Effect of Ultrasonic Intensity on Sprouting
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
- An Improved Sliding Window Algorithm for Max-Log-MAP Turbo Decoder and Its Programmable LSI Implementation(Electronic Circuits)
- Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode
- Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- B-10-41 12.5Gb/s偏波多重QPSKリアルタイムディジタル信号処理回路の開発(B-10.光通信システムB(光通信方式,光通信機器,デバイスのシステム応用,光通信網・規格),一般セッション)
- Effects of N_2O Plasma Treatment for Low Temperature Polycrystalline Silicon TFTs(Special Issue on Electronic Displays)
- A Communication Network Control Architecture to Integrate Service Control and Management (Special Issue on Distributed Architecture for Next Generation Communication Networks)
- CODEC Hardware Engines for a Low-Power Baseband DSP Macro(Regular Section)
- Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- Focused Si Ion Implantation in GaAs
- GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- Sn Ion Doping during GaAs MBE with Field Ion Gun
- Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- Electrooptical Properties of Heterostructure (Pb, La)(Zr, Ti)O_3 Wave guides on Nb-SrTiO_3
- A 1V, 10.4mW Low Power DSP Core for Mobile Wireless Use (Special Issue on Low-power LSIs and Technologies)
- Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
- Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/lnGaAsP Quantum-Well Lasers
- An Improved Technique for Fabricating High Quantum Efficiency Ridge Waveguide AlGaAs/GaAs Quantum Well Lasers
- An Optical Add-Drop Multiplexer with a Grating-Loaded Directional Coupler in Silica Waveguides (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optical Add-Drop Multiplexer with a Grating-Loaded Directional Coupler in Silica Waveguides (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_As with Low Al Content
- Decrease in incidence of surgical site infections in contemporary series of patients with radical cystectomy
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
- High Density Optical Recording on Dye Material Discs: An Approach for Achieving 4.7 GB Density
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Life Test of GaAs DH Lasers at Room Temperature
- Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning (Special Issue on Opto-Electronics and LSI)
- Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film
- The Effect of Nitrogen on Thermal Diffusion in HfO_2-based Gate Dielectrics
- Hole Trapping Due to Impurities in Amorphous Silicon Dioxide
- Compact 40Gbit/s EML Module Integrated with Driver IC
- Preparation of Cu-O Films by Sputtering Using He Gas ( Plasma Processing)
- Improvement of Electron Beam Recorder for Mastering of Future Storage Media
- Intrinsic Gettering of Iron Impurities in Silicon Wafers
- Mo Contamination in p/p^+ Epitaxial Silicon Wafers
- Automotive FM-CW Radar with Heterodyne Receiver (Special Issue on Millimeter-wave Short-range Application Systems Technology)
- Metal Alkoxide Solution-Derived Epitaxial Lead Titanate-Based Thin-Film Optical Waveguides
- Current Switching Observed in Planar Gunn-Effect Device with Thin Active Layer
- Time Dependent Potential in Planar Gunn-Effect Device
- Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance
- An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors
- The Effect of Heat Treatment on Al-GaAs Schottky Barriers
- Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- P300/CBP-associated factor regulates Y-box binding protein-1 expression and promotes cancer cell growth, cancer invasion and drug resistance
- The nationwide study of bacterial pathogens associated with urinary tract infections conducted by the Japanese Society of Chemotherapy
- Management for males whose female partners are diagnosed with genital chlamydial infection
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Criteria for safety evaluation of antimicrobial agents
- Diffusion Profiles of Arsenic in Silicon Observed by Backscattering Method and by Electrical Measurement
- Optical Semiconductor Devices for Interconnection Approach from Optical Transmission Scheme (Special Issue on Opto-Electronics and LSI)
- Network Restoration Algorithm for Multimedia Communication Services and Its Performance Characteristics
- KrF Resist Pattern Monitoring by Ellipsometry
- Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Evaluation of LOCOS Induced Stress Using Raman Spectroscopy with an Al-Mask
- Study on the Throughput Limits over the HDLC Protocol
- A Modular Grobner Basis Method for Algebraic Equations
- A Modular Method for Grobner-basis Construction over Q and Solving System of Algebraic Equations
- Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Formation of n-Layer in In_Ga_As by Si Implantation
- Stress-Released MBE Growth on GaAs on Si (001) with a Si-GaAs Superlattice Buffer
- Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching
- Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass
- A Backscattering-Channeling Study of Thermally Grown Nitride Films on Silicon
- Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes : B-3: LASER
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- Evaluation of Shot Position Error in Electron Beam Lithography Using Overlay Metrology with 'One-Shot' Inspection Mark
- Degradations of Optically-Pumped GaAlAs Double Heterostructures at Elevated Temperatures
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- A High-Speed Josephson Latching Driver for a Superconducting Single-Flux-Quantum System to Semiconductor System Interface
- Optical Pickup with a Spherical Aberration Compensator Using a Crossed-Stripe Liquid Crystal Device
- Interface States due to Intrinsic Defects in Si(100)/SiO_2
- A Network Architecture for ATM-Based Connectionless Data Services (Special Issue on Broadband ISDN : Application, Networking and Management)
- Faithful plotting on a two dimensional pixel space
- Visible GaAlAs Laser with a Buried-Convex Waveguide Structure : B-4: LD AND LED-2
- SPM Studies of Hydrogen-Induced Degradation of Pt/PLZT/Pt Capacitors
- 非線形対策アルゴリズムを適用したデジタルコヒーレント伝送システムにおける偏波モード分散の影響(光変復調方式,多値光変復調,コヒーレント光通信,光増幅・中継技術,非線形・偏波問題,コア・メトロシステム,海底伝送システム,光伝送システム設計・ツール,一般(OFC報告))
- Risa/Asir and its applicability to teaching and learning mathematics (日本数式処理学会第14回大会報告)
- Noda2005論文 Strelitz test for stable polynomials and its application to design problems of control systems
- Influence of Film Characteristics on the Sputtering Rate of MgO (Special Issue on Electronic Displays)
- Molecular Beam Epitaxial Growth of Stress-released GaAs Layers on Si(001) Substrates : Semiconductors and Semiconductor Devices
- Precise Line-and-Space Monitoring Results by Ellipsometry
- Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga_Al_xAs DH Lasers
- Instability of SiO_2 Film Caused by Fluorine and Chlorine Inclusion
- Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
- Flat Intensity Lens with High Optical Efficiency and Small Spot Size for Use in Optical Disc
- Ohmic Contacts to p-GaAs with Au/Zn/Au Structure
- Behavior of Light Mass Element Impurities in Silicon Crystals : Focus on Phenomena Related to Oxygen Impurities(Abstracts of Doctoral Dissertations,Annual Report (from April 1996 to March 1997))
- Three-Dimensional Proximity Effect Correction for Multilayer Structures in Electron Beam Lithography
- Nationwide surveillance of bacterial respiratory pathogens conducted by the Japanese Society of Chemotherapy in 2008 : general view of the pathogens' antibacterial susceptibility
- 1.5 μm Wavelength InGaAsP/InP DH LED with Improved Radiance Characteristics
- 12.5Gb/s偏波多重QPSKリアルタイム受信器によるディジタルコヒーレント方式の偏波変動追従性能の評価(光変復調方式,多値光変復調,コヒーレント光通信,非線形・偏波問題,分散補償デバイス,光信号処理,光測定器,光通信用ディジタル信号処理,光通信計測,光通信用LSI,誤り訂正,一般)
- Interfacial Structures of SiO_2/Si
- High Optical Efficiency Integrated Head for Use in Magneto-Optical Disk Drive
- Reconditioning-Free Polish for Inter-Layer-Dielectric Planarization
- Clinical efficacy of levofloxacin 500mg once daily for 7 days for patients with non-gonococcal urethritis
- New Practical Model for Endurance Degradation Analysis of Ferroelectric Capacitors
- Modulation of Microwave Transmission by Acoustoelectric Domains in CdS
- Overview of Photonic Switching Systems Using Time-Division and Wavelength-Division Multiplexing (Special Issue on Photonic Switching Technologies)
- BCI-1-4 デジタル信号処理による長距離光伝送用光電子デバイスの特性補償技術(BCI-1.電子・光技術の融合集積による通信デバイスの将来,依頼シンポジウム,ソサイエティ企画)
- BCI-1-4 デジタル信号処理による長距離光伝送用光電子デバイスの特性補償技術(BCI-1.電子・光技術の融合集積による通信デバイスの将来,依頼シンポジウム,ソサイエティ企画)
- Ultra Thin SrBi_2Ta_2O_9 Ferroelectric Films Grown by Liquid Source CVD Using BiOx Buffer Layers
- Simultaneous Observation of Molecular Contamination Behavior in Semiconductor Clean room Using Quartz Crystal Microbalance
- Advancements in Urology 2011 : A Japanese Urological Association (JUA)/American Urological Association (AUA) Symposium
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Characterization of Defects in InP-InGaAsP Double-Heterostructure Materials : SOLID SOLUTIONS
- Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
- Time-Dependent Airborne Organic Contamination on Silicon Wafer Surface Stored in a Plastic Box
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing
- Full-Chip Lithography Verification for Multilayer Structure in Electron-Beam Lithography
- Picosecond HEMT Pholodetector
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- Observation of Adsorption Phenomena of Dibutyl Phthalate Molecules on Si Surface Using Quartz Crystal Microbalance Method
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Adsorption and Desorption of Dibutyl Phthalate on Si Surface Measured in Controlled Atmosphere using Quartz Crystal Microbalance Method
- Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film
- Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 $\mu$m
- A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions
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