Three-Dimensional Proximity Effect Correction for Multilayer Structures in Electron Beam Lithography
スポンサーリンク
概要
- 論文の詳細を見る
Proximity effects in multiwiring layers including heavy-metal materials such as tungsten (W) plug are crucial. In this paper, a novel three-dimensional proximity effect correction method which is based on the simplified electron energy flux (SEEF) model combined with the extended area density map method to multilayer structure is proposed. In this SEEF model, electron energy fluxes transmitted and reflected at each layer are discussed and their maps are reconstructed repeatedly by distributing and gathering electron energy fluxes at each layer. The resultant final map of electron energy flux at the surface layer under the resist contributes as the backscattering energy deposited in the resist. Our new correction method has been confirmed by the experiments to powerfully correct the proximity effects in a 3-layer structure. The screening effect due to the W plug array is first observed and can also be corrected by the proposed method.
- 2004-06-15
著者
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OGINO Kozo
Fujitsu Ltd.
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MARUYAMA Takashi
Fujitsu Limited
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KAWAMURA Eiichi
Fujitsu Limited
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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Osawa Morimi
Fujitsu Laboratories Ltd.
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Machida Yasuhide
Fujitsu Limited
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Machida Yasuhide
Fujitsu Limited., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Hoshino Hiromi
Fujitsu Limited
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Hoshino Hiromi
Fujitsu Limited., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Osawa Morimi
Fujitsu Limited., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Ogino Kozo
Fujitsu Limited
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Ogino Kozo
Fujitsu Limited., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Arimoto Hiroshi
Fujitsu Limited., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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