Evaluation of Shot Position Error in Electron Beam Lithography Using Overlay Metrology with 'One-Shot' Inspection Mark
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概要
- 論文の詳細を見る
Electron Beam (EB) lithography is the most attractive tool for the development of the Ultra Large Scale Integrated Circuit (ULSI) devices with the finest pattern rule. It is necessary to estimate precisely the unsteadiness of the pattern positions in EB lithography. We measured shot unsteadiness in EB lithography using conventional overlay (O/L) technology with the one-shot inspection mark. The reproducibility of mark edge detection of the same mark pattern was found to have a standard deviation (σ) of less than 0.3 nano-meters (nm), and the steadiness of shot-positioning was estimated to have a σ of less than 3 nm.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Nara Y
Fujitsu Lab. Ltd. Atsugi Jpn
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Nara Yasuo
Fujitsu Laboratories Ltd.
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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Asano Koji
Fujitsu Laboratories Ltd.
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NAGATA Takeo
Fujitsu Laboratories Ltd.
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SATO Masami
Fujitsu Laboratories Ltd.
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