Impact Ionization in 0.1 μm Metal-Oxide-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
The impact ionization rate in a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) is universally plotted on a simple straight line when ln (I_<sub>/I_d) is plotted versus 1/(V_<ds>-V_<dsat>). V_<dsat> is the drain saturation voltage. However, we found a deviation from this universal relationship for different gate voltages applied to the MOSFETs fabricated by 0.15 μm technology. We show that the deviation is due to the gate-voltage dependence of the saturation electric field E_<sat>, which results from the degradation of the effective surface mobility μ_<eff>. The new method for finding a universal relationship is proposed.
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Nara Yasuo
Fujitsu Laboratories Ltd.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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KURATA Hajime
Fujitsu Laboratories Ltd.
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