Si Wafer Bonding with Ta Silicide Formation
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概要
- 論文の詳細を見る
Bonded SOI wafers with a Ta silicide layer are fabricated. The 0.08-μm-thick Ta film sputtered on an oxidized Si wafer is bonded to another Si wafer with a native oxide. When the wafers are uniformly bonded by pulse-field-assisted bonding, Ta silicide forms at the interface. The buried Ta silicide layer is 0.12 μm thick and the sheet resistance is 9Ω/□. From a SIMS analysis, Ta decreases rapidly in Si. This proves that a pure SOI layer for devices can be obtained.
- 社団法人応用物理学会の論文
- 1991-10-01
著者
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ITO Takashi
Fujitsu Laboratories Ltd.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
Fujitsu Laboratories Ltd.
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Fukuroda Atsushi
FUJITSU LABORATORIES LTD.
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