Achieving High Current Gain and Low Emitter Resistance with the SiC_x:F Widegap Emitter
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概要
- 論文の詳細を見る
We investigated the relationship between current gain and emitter resistace of the heterojunction bipolar transistor using an SiC_x terminated by fluorine atoms (SiC_x:F) widegap emitter and achieved high current gain and low emitter resistance. The emitter resistance of about 40 Ω・μm^2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics. The compatibility of high current gain and low emitter resistance will lead to higher cut-off-frequency due to decreased emitter charge storage.
- 社団法人応用物理学会の論文
- 1991-06-01
著者
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ITO Takashi
Fujitsu Laboratories Ltd.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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Yamazaki Tatsuya
FUJITSU LABORATORIES LTD.
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Sugii T
Fujitsr Ltd. Akiruno-shi Jpn
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Yamazaki T
Atr Adaptive Communications Research Laboratories:(present Address)communications Research Laborator
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Ito T
Department Of Chemical Engineering Graduate School Of Engineering Nagoya University
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