Key Issues for Manufacturable FeRAM Devices : Novel 0.35um FRAM Technology using Triple Level Aluminum Layer for High Speed and Low Voltage Operation

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Yamazaki Tatsuya

  FUJITSU LABORATORIES LTD.

• Yamazaki Tatsuya

  Fujitsu Ltd.

関連論文

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• Oxynitride Pad LOCOS (ON-LOCOS) Isolation Technology for Gigabit DRAMs
• Key Issues for Manufacturable FeRAM Devices : Novel 0.35um FRAM Technology using Triple Level Aluminum Layer for High Speed and Low Voltage Operation
• Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy

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