Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation

概要

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Photoelectron current by an irradiation of broadband synchrotron radiation (SR) is evaluated experimentally and theoretically for silicon dioxide (SiO_2) film on silicon. The SiO_2 film is known to be evaporated during SR irradiation at elevated temperatures. It is found that the photoemitted current from SiO_2 film on Si shows a characteristic change during SR-excited SiO_2 evaporation. At the final stage of SiO_2 evaporation, where the residual thickness decreases to less than 5 nm, the photoemitted current stats to decrease. By theoretical calculation, the decrease in photoemitted current at the end of SiO_2 evaporation is attributed mainly to the decrease in the absorption of photons by O 2p electrons. It is shown that the photoelectron currerat is surface sensitive and the measurement of the curretat is a convenient approah for in-situ monitoring of the photoexcited surface reactions such as the end-point detection of SR-excited SiO_2 etching.
社団法人応用物理学会の論文
1992-12-30