Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics(<Special Section>High-κ Gate Dielectrics)
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概要
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We prepared HfO_2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO_2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO_2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.
- 2004-01-01
著者
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Yoshikawa K
Laboratory Of Food Microbiological Engineering Faculty Of Agriculture Kinki University
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Yoshikawa Kentaro
Laboratory Of Food Microbiological Engineering Faculty Of Agriculture Kinki University
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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Yoshikawa K
Department Of Bioscience Faculty Of Bioresources Mie University
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Yoshikawa Kazuhiro
Toray Research Center Inc.
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SUGIYAMA Naoyuki
Toray Research Center, Inc.
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Yamamoto Tetsushi
Material And Life Science Graduate School Of Engineering Osaka University
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YAMAMOTO Takashi
Toray Research Center, Inc.
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IZUMI Yukiko
Toray Research Center, Inc.
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HASHIMOTO Hideki
Toray Research Center, Inc.
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Yoshikawa K
Toray Research Center Inc.
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Hashimoto H
The Dept. Of Electrical & Electronic System Kanazawa University
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Yamamoto T
Toray Research Center Inc.
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Sugiyama Naoyuki
Toray Research Center Inc.
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Sugita Y
Fujitsu Laboratories Ltd.
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Yoshida Kouji
Department Of Apple Research National Institute Of Fruit Tree Science
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Hashimoto H
Toray Research Center Inc.
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Hashimoto Hideki
Toray Research Center Inc.
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Yamamoto Takashi
Toray Research Center Inc., Otsu 520-8567, Japan
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