Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(<Special Section>High-κ Gate Dielectrics)

概要

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We studied nitrogen incorporation in A1_2O_3 gate dielectrics by nitrogen plasma and examined the dependence of the electrical properties on the nitrogen incorporation. We found that the nitrogen concentration and profile in A1_2O_3 films thinner than 3 nm can be controlled by the substrate temperature and the plasma conditions. The electrical characterization showed that the plasma nitridation suppresses charges in A1_2O_3 films and prevents dopant penetration through the gate dielectric without increasing the leakage current or the interfacial trap density. We also demonstrated the improved performance of a metal-oxide-semiconductor field effect transistor by using a plasma nitrided A1_2O_3 gate dielectric. These results indicate that plasma nitridation is a promising method for improving the electrical properties of A1_2O_3 gate dielectrics.
社団法人電子情報通信学会の論文
2004-01-01