Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)

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概要

• 論文の詳細を見る

• This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC_2H_5)_5] and oxygen gas mixture. The films are annealed at 600-900℃ in dry O_2 atmosphere. Densification of the as-deposited film by annealing in dry O_2 is indispensable to the formation of highly reliable ultra-thin tantalum oxide capacitors. The RTN treatment reduces the SiO_2 equivalent thickness and leakage current of the tantalum oxide film, and improves the time dependent dielectric breakdown characteristics of the film.

• 社団法人電子情報通信学会の論文
• 1994-03-25

著者

• ISHITANI Akihiko

  ULSI Device Development Laboratories, NEC Corporation

• LESAICHERRE Pierre-Yves

  ULSI Device Development Laboratories, NEC Corporation

• Kamiyama S

  Silicon Systems Research Laboratories Nec Corporation

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Lesaicherre Pierre-yves

  Ulsi Device Development Laboratories Nec Corporation

• Lesaicherre P‐y

  Ulsi Device Development Laboratories Nec Corporation

• Suzuki Hiroshi

  ULSI Device Development Laboratories, NEC Corporation

• Ishitani A

  O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat

• Ishitani Akihiko

  Ulsi Device Development Laboratories Nec Corporation

• Kamiyama Satoshi

  Faculty of Science and Technology, Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University

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