Present and Future Nitride-Based Devices

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama S

  Silicon Systems Research Laboratories Nec Corporation

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Akasaki I

  Faculty Of Science And Technology Meijo University

• Akasaki I

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Akasaki Isamu

  Meijo University Department Of Electrical And Electronic Engineering

• KAMIYAMA Satoshi

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• 天野 洋

  Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ

• Akasaki Isamu

  Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, Meijo University

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University

• Kamiyama Satoshi

  Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Kamiyama Satoshi

  Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University

関連論文

• Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Microscopic Investigation of Al_Ga_N on Sapphire
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
• Photoluminescence Decay Properties of Indium Doped ZnS
• VPE Growth of ZnS Incorporating Indium on GaP
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
• Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
• Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
• Optical Properties of Strained AlGaN and GaInN on GaN
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
• Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
• High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
• The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
• Present and Future Nitride-Based Devices
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering in ZnS_xSe_ Alloys
• Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
• Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
• Effects of Nano- and Microscale SiO
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
• Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Stacking Faults and Luminescence Property of InGaN Nanowires
• Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
• GaN Overgrowth on Thermally Etched Nanoporous GaN Template
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Gel filtration study of the effect of urea on the dissolution state of sodium dodecyl sulfate.
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

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