Raman Scattering in ZnS_xSe_<1-x> Alloys

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-03-15

著者

• Hayashi K

  Kyoto Univ. Kyoto Jpn

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• HAYASHI Kouji

  Department of Electronics, School of Engineering, Nagoya University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

関連論文

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• The Substrate-film Lattice Mismatch in La0.7Ba0.3MnO3 Thin Films for Uncooled Infrared Bolometric Applications (特集 機能性酸化物薄膜材料とそのプロセス)
• Fabrication of Bi-La-Sr-Mn-O Uncooled Microbolometer : Semiconductors
• Bi-Substitution Effect in La-Sr-Mn-O Thin Films for Bolometric Applications : Surfaces, Interfaces, and Films
• Bismuth-Substituted Lanthanum Manganite for Bolometric Applications
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Temperature Dependence of Resistivity and its Anisotropy of Ba-Y-Cu-O Single Crystals
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Microscopic Investigation of Al_Ga_N on Sapphire
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
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• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
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• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
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• Electrical Transport Properties of p-GaN
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• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
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• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y

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