Hiramatsu K | Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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概要
- 同名の論文著者
- Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie Universityの論文著者
関連著者
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Hiramatsu K
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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DETCHPROHM Theeradetch
Department of Electrical and Electronic Engineering, Meijo University
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YOSHIDA Harumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Yoshida H
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Detchprohm T
High-tech Research Center Meljo University
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Amano H
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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URUSHIDO Tatsuhiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Urushido Tatsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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Itoh Kikuo
Faculty Of General Education Kumamoto University
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ITOH Kenji
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University
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Itoh K
Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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Itoh Kenji
Department of Applied Chemistry and Department of Synthetic Chemistry, Faculty of Engineering, Nagoya University
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Hayashi K
Kyoto Univ. Kyoto Jpn
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NAKAYAMA Hisashi
Department of Surgery, Nihon University Nerimahikarigaoka Hospital
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KHAN Mohammad
Department of Anatomy and Histology, Faculty of Veterinary Science, Bangladesh Agricultural Universi
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HACKE Peter
The authors are with Fujitsu Laboratories Ltd.
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Nakayama Hideki
Faculty Of Engineering Shizuoka University
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Khan Mohammad
Department Of Electronics Nagoya University
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Hacke Peter
Department Of Electronics Nagoya University
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HAYASHI Kouji
Department of Electronics, School of Engineering, Nagoya University
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Terada Y
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Nakayama H
Fuji Xerox Co. Ltd. Ebina Jpn
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Nakayama Hisashi
Department Of Digestive Surgery Nihon University School Of Medicine
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Zhu Qinsheng
Department Of Electronics School Of Engineering Nagoya University
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TERADA Yuusuke
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Khan Mohammad
Department Of Anatomy And Histology Faculty Of Veterinary Science Bangladesh Agricultural University
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Kawamoto Takeshi
Department of Dental and Medical Biochemistry, Hiroshima University Graduate School of Biomedical Sc
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Goto H
Mie Univ. Tsu Jpn
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Goto Hideo
Department Of Electrical Engineering Chubu University
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FUKUI Kazutoshi
Department of Electrical and Electronics Engineering,Faculty of Engineering,Fukui University
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Goto H
Fujitsu Ltd. Kawasaki Jpn
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KOIDE Norikatsu
Toyoda Gosei Co., Ltd.
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Kawamoto Takeshi
Department Of Electronics School Of Engineering Nagoya University
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Kawamoto Takeshi
Department Of Anesthesiology Kansai Denryoku Hospital
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Koide Norikatsu
Toyoda Gosei Co. Ltd. Technical Research & Development Dept.
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Koide Norikatsu
Toyoda Gosei Co. Ltd.
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Yamaguchi M
Facult. Eng. Univ. Chiba
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Yamaguchi M
Toyota Technological Inst. Nagoya Jpn
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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KITO Masahiro
Department of Electronics, Nagoya University
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Kito Masahiro
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Kito Masahiro
Department Of Electronics Nagoya University
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Kotoh Masahiro
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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MAEKAWA Atsuyoshi
Department of Electronics, School of Engineering, Nagoya University
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TADATOMO Kazuyuki
Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.
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OHUCHI Youichiro
Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.
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Fukui Kazutoshi
Department Of Vacuum Uv Photoscience Institute For Molecular Science
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Fukui Kazutoshi
Department Of Applied Physics Fukui University
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MOTOGAITO Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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YAMAGUCHI Motoo
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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HAMAMURA Yutaka
Sagamihara Plant, Nikon Co., Ltd.
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Ohuchi Youichiro
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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Tadatomo Kazuyuki
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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Motogaito Atsushi
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hamamura Yutaka
Sagamihara Plant Nikon Co. Ltd.
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KANEDA Naoki
Department of Electronics, School of Engineering, Nagoya University
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HIROSAWA Koji
Department of Electronics, Nagoya University
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ZHU Qin-Sheng
Department of Electronics, School of Engineering, Nagoya University
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Maekawa A
Department Of Electronics School Of Engineering Nagoya University
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Hirosawa Koji
Department Of Electronics Nagoya University
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Kaneda Naoki
Department Of Electronics School Of Engineering Nagoya University
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Kito Masahiro
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
著作論文
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- Field Emission from GaN Self-Organized Nanotips
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y