Hiramatsu Kazumasa | Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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概要
- HIRAMATSU Kazumasaの詳細を見る
- 同名の論文著者
- Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie Universityの論文著者
関連著者
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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Yamaguchi M
Toyota Technological Inst. Nagoya Jpn
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Iyechika Yasushi
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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IYECHIKA Yasushi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Hiramatsu K
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Motogaito Atsushi
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Sugiura T
Department Of Electrical Engineering Toyota College Of Technology
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Honda Yoshio
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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YAMAGUCHI Masahito
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Matsushima Hidetada
Department Of Electronics School Of Engineering Nagoya University
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Honda Yoshio
Department Of Electronics Nagoya University
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Honda Y
Hitachi Ltd. Kokubunji‐shi Jpn
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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TANAKA Shigeyasu
Department of Biology, Faculty of Science, Shizuoka University
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Honda Y
Department Of Electronics Nagoya University
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Honda Y
Tokyo Inst. Technol. Tokyo Jpn
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SONE HIROKI
Department of Geophysics, School of Earth Sciences, Stanford University
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Sone Hiroki
Department Of Electronics School Of Engineering Nagoya University
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Sone Hiroki
Department Of Chemistry Faculty Of Science Nagoya University
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Tanaka Shigeyasu
Department Of Biology Faculty Of Science Shizuoka University
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Tanaka S
Toshiba Corp. Kawasaki Jpn
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Honda Y
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Tanaka Shin-ichiro
Institute For Molecular Science
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Tanaka Shun-ichi
Department of Applied Physics, Faculty of Engineering, The University of Tokyo
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Tanaka S
Atr Media Integration And Communications Research Laboratories
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MOTOGAITO Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Tanaka Seiichi
ATR Media Integration and Communications Research Laboratories
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TANAKA Shigeyasu
Department of Anatomy, Josai Dental College
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Andoh Hiroya
Department Of Information And Computer Engineering Toyota College Of Technology
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Andoh Hiroya
Toyota National College Of Technology
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Goto H
Mie Univ. Tsu Jpn
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Goto Hideo
Department Of Electrical Engineering Chubu University
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Hayashi K
Kyoto Univ. Kyoto Jpn
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MATSUSHIMA Hidetada
Department of Electronics, School of Engineering, Nagoya University
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HONDA Yoshiaki
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Honda Yoshiaki
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Goto H
Fujitsu Ltd. Kawasaki Jpn
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SUGIURA Touko
Department of Electrical Engineering, Toyota College of Technology
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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HAYASHI Kouji
Department of Electronics, School of Engineering, Nagoya University
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NAMBU Shingo
Department of Electronics, School of Engineering, Nagoya University
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SHIBATA Takumi
Department of Electronics, School of Engineering, Nagoya University
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Nambu Shingo
Department Of Electronics School Of Engineering Nagoya University
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Zhu Qinsheng
Department Of Electronics School Of Engineering Nagoya University
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YAMAGUCHI Motoo
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Bohyama Shinya
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Ja
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MACHIDA Narito
Division of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University
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MANABE Katsuhide
Division of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University
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安藤 浩哉
Toyota National College Of Technology
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Machida Narito
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Manabe Katsuhide
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Bohyama Shinya
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Bertram F
Otto-von-guericke‐univ. Magdeburg Magdeburg Deu
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Christen J
Otto-von‐guericke Univ. Magdeburg Deu
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Christen Jurgen
Institute Of Experimental Physics Otto-von-guericke University
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Shimizu Masaya
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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FUKUI Kazutoshi
Department of Electrical and Electronics Engineering,Faculty of Engineering,Fukui University
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OKI Kensuke
Department of Electronics, Kyoto Institute of Technology
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Oki Kensuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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KUWANO Noriyuki
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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TOMITA Kazuyoshi
Department of Surgery and Neurosurgery, Osaka University Medical School
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HIRAMATSU Kazumasa
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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MOTOGAITO Atsushi
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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MIYAKE Hideto
The authors are with the Department of Electrical and Electronic Engineering, Mie University
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HONDA Yoshiaki
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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IYECHIKA Yasushi
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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MAEDA Takayoshi
The authors are with Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd
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BERTRAM Frank
The authors are with Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat
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CHRISTEN Juergen
The authors are with Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat
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HOFFMANN Axel
The author is with Institut fur Festkorperphysik, Technische Universitat
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Kuwano Noriyuki
Advanced Science And Technology Center For Cooperative Research Kyushu University
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YOSHIKAWA Kenji
Department of Neurology, Kyoto Prefectural University of Medicine
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Tomita Kazuyoshi
Department Of Applied Pharmacology Kyoto Pharmaceutical University
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Tomita Kazuyoshi
Department Of Electronics School Of Engineering Nagoya University
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Morikawa Tadanori
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Yamaguchi M
Facult. Eng. Univ. Chiba
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Hoffmann Axel
The Author Is With Institut Fur Festkorperphysik Technische Universitat
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HASE Nobuyasu
Department of Electrical Engineering, Toyota College of Technology
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Kotoh Masahiro
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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TSUKAMOTO Takehiko
Department of Electrical and Electronic Engineering, Toyota College of Technology
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TADATOMO Kazuyuki
Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.
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OHUCHI Youichiro
Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.
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Hase N
Department Of Electrical Engineering Toyota College Of Technology
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Christen Juergen
The Authors Are With Institut Fur Experimentelle Physik Otto-von-guericke-universitat
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Fukui Kazutoshi
Department Of Vacuum Uv Photoscience Institute For Molecular Science
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Fukui Kazutoshi
Department Of Applied Physics Fukui University
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HAMAMURA Yutaka
Sagamihara Plant, Nikon Co., Ltd.
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Ohuchi Youichiro
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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Tadatomo Kazuyuki
Photonics Research Laboratory Mitsubishi Cable Industries Ltd.
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Hamamura Yutaka
Sagamihara Plant Nikon Co. Ltd.
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Bertram Frank
The Authors Are With Institut Fur Experimentelle Physik Otto-von-guericke-universitat
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Yoshikawa Kenji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Miyake H
Toshiba Corp. Kawasaki‐shi Jpn
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Tsuchida Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba 300-3294, Japan
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NAOI Hiroyuki
Satellite Venture Business Laboratory, Mie University
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MAEDA Takayosi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HAINO Masahiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Haino Masahiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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MIYAKE Hideto
Division of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University
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MOTOGAITO Atsushi
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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MANABE Katsuhide
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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YAMANAKA Yuuki
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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MACHIDA Narito
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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MIYAKE Hideto
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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HIRAMATSU Kazumasa
Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering
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TSUKAMOTO Keisuke
Department of Advanced Science for Electronics and Materials, Kyushu University
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TAKI Wataru
Department of Advanced Science for Electronics and Materials, Kyushu University
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HORIBUCHI Kayo
Department of Advanced Science for Electronics and Materials, Kyushu University
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HIROSAWA Koji
Department of Electronics, Nagoya University
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ZHU Qin-Sheng
Department of Electronics, School of Engineering, Nagoya University
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Tsuchida Yoshihiko
Sumitomo Chemical Co. Ltd. Ibaraki Jpn
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Yoshikawa Kenji
Department Of Chemistry Waseda University
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Yamanaka Yuuki
Mie University Department Of Electrical And Electronic Engineering Graduate School Of Engineering
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Hiramatsu Kazumasa
Mie University Department Of Electrical And Electronic Engineering Graduate School Of Engineering
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Naoi Hiroyuki
Satellite Venture Business Laboratory Mie University
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Hirosawa Koji
Department Of Electronics Nagoya University
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Tsukamoto Keisuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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Horibuchi Kayo
Department Of Advanced Science For Electronics And Materials Kyushu University
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Taki Wataru
Department Of Advanced Science For Electronics And Materials Kyushu University
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Matsushima Hidetaka
Department of Electronics, School of Engineering, Nagoya University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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TSUCHIDA Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
著作論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light
- Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y