TSUCHIDA Yoshihiko | Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
スポンサーリンク
概要
関連著者
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TSUCHIDA Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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Hiramatsu Kazumasa
Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Ntt Corp. Tsukuba‐shi Jpn
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Yamada Takahiro
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Bohyama Shinya
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Ja
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Tsuchida Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba 300-3294, Japan
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Yamane Hisanori
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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Tsuchida Yoshihiko
Sumitomo Chemical Co. Ltd. Ibaraki Jpn
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Bohyama Shinya
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Kohiro Kenji
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Nanbu Hiroshi
Center For Interdisciplinary Research Tohoku University
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Nanbu Hiroshi
Center for Interdisciplinary Research, Tohoku University, 6-3 Aramaki, Aoba-ku, Sendai 980-8578, Japan
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YAMADA Takahiro
Institute of Multidisciplinary for Advanced Materials, Tohoku University
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Tsuchida Yoshihiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
著作論文
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- Europium-Doped Gallium Nitride Prepared by Na Flux Method