MAEDA Takayoshi | Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

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著作論文

0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)
Future Technology Trends on Magneto-Optical Recording
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

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