Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)

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概要

• 論文の詳細を見る
• 2002-01-15

著者

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• IYECHIKA Yasushi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• MAEDA Takayoshi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• YOSHIKAWA Kenji

  Department of Neurology, Kyoto Prefectural University of Medicine

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Maeda T

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Yoshikawa Kenji

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Bohyama Shinya

  Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Ja

• NAOI Hiroyuki

  Satellite Venture Business Laboratory, Mie University

• MAEDA Takayosi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• Yoshikawa Kenji

  Department Of Chemistry Waseda University

• Naoi Hiroyuki

  Satellite Venture Business Laboratory Mie University

• Bohyama Shinya

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Iyechika Yasushi

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

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