Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

スポンサーリンク

概要

• 論文の詳細を見る

• The crystalline quality of AlGaN with high AlN molar fraction grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) was improved by using high-quality epitaxial AlN film on sapphire (0001). Atomically flat AlxGa1-xN ($0.2<x<0.8$) without any cracks was fabricated on the epitaxial AlN film. Lattice constants of the Al0.48Ga0.52N and the AlN at growth temperature were estimated from high-temperature X-ray diffraction measurement. The results showed that the in-plane lattice constant of the Al0.48Ga0.52N was stress-free or slightly compressed even at the growth temperature. The smaller in-plane lattice constant of AlN than that of AlGaN is considered to play a great important role in restraining generation of cracks.

• 公益社団法人 応用物理学会の論文
• 2003-06-01

著者

• SHIBATA Tomohiko

  Department of Chemistry, Graduate School of Science, Kyoto University

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Shibata Tomohiko

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

• Kida Yoshihiro

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan

関連論文

• Selective Area Growth of III-Nitride and Their Application for Emitting Devices
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Collapse of Superconductivity in the Y123/Y124 Superlattice System Y_2Ba_4Cu_7O_
• Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• Magnetic Susceptibility of YBa_2(Cu_Fe_x)_3O_y Prepared by Various Heat Treatments
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• Variation of Surface Potentials of Si-Doped Al_xGa_N (O
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
• Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
• Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
• Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
• Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
• Field Emission from GaN Self-Organized Nanotips
• Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
• Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
• Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
• In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Electrical Transport Properties of p-GaN
• Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
• Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
• Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
• X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
• Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
• Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Phase Diagram of the CuGaS_2-In Pseudobinary System
• Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
• Growth of CuGaS_2 Single Crystals by Traveling Heater Method
• Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
• Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
• Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
• Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
• Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
• Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
• Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
• Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
• Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
• Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
• Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
• Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
• Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
• Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
• Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
• Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
• Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
• AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
• Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
• Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
• Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

もっと見る 閉じる

スポンサーリンク