Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia

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概要

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• The thermal decomposition behaviours of gallium ethylenediamine tetraacetic acid (Ga–EDTA) complex (Ga[(OOCCH2)2–N–CH2–CH2–N–(CH2COO)2]NH4) powders were investigated by thermogravimetric and differential thermal analysis (TG/DTA) under a flow of various ambient gas. It is found that the thermal stability of Ga–EDTA complexes is not much influenced by the ambient gases. In the case of ammonia ambient, with increasing the temperature, the mass loss undergoes four steps due to thermal decomposition and release of organic groups, resulting in Ga–iminodiacetate (IMDA), Ga–glycinate, and other Ga-related compounds, followed by the formation of GaN and carbon elimination. X-ray diffraction (XRD) patterns of the residue revealed that the temperature of GaN crystallization ranged from about 600 to 1100 °C and that the crystal quality improved with temperature. GaN powders of high crystal quality was obtained at 1100 °C.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-12-15

著者

• Liu Yu-huai

  Department Of Electrical And Electronic Engineering Mie University

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• NAKAMURA Atsushi

  Chubu Chelest Co., Ltd.

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Koide Shinya

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Nambu Nobuyoshi

  Chubu Chelest Co., Ltd., Yokkaichi, Mie 510-0886, Japan

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