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Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
- Two- and Three-Dimensional Fully-Depleted Extension-Less Devices for Advanced Logic and Memory Applications (Special Issue : Solid State Devices and Materials)
- Friction Drive Simulation of Surface Acoustic Wave Motor Characteristics Based on Contact Mechanics
- A Flashover Prediction Method for Contaminated Insulators using a Stochastic Analysis of Leakage Current
- Effects of Aberrations in Volume Holographic Memory with Spherical Reference Beams
- Local Transport Property of GaN Cluster as a Model of Nanowire
- Theoretical Analysis of Electron Standing Waves and Electric Field Intensity in the Vacuum Gap of Scanning Tunneling Microscopy
- Nanomechanics of Protein-Based Biostructures
- Development of Focused Ion Beam Machining Systems for Fabricating Three-Dimensional Structures
- Formation and Characterization of TiO2–SnOx–Sn Composite Nanowires Fabricated by Reduction/Oxidation of Sn and Ti Ions
- Orientation of Feeble Magnetic Particles in Dynamic Magnetic Fields
- Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
- $z$-Scan Method Using the Flat-Topped Beam and Its Application to the Evaluation of the Two-Photon-Absorbing Material
- Electron Redistribution and Coherent Radiation of Laser-Sliced Beam Bunches in Storage Ring
- Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique (Special Issue : Solid State Devices and Materials)
- Application of Nonlinear Minimum Mean Square Error Equalization for Holographic Data Storage
- Quasi-Isochronous Optics for Sub-Picosecond Bunch Length at Pohang Light Source
- Low-$k$ Dielectric Film Patterning by X-Ray Lithography
- Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor
- Cryogenic Current Comparator Bridge Supplying Current up to 1 A and Current Dependence Measurement of 1 $\Omega$ Resistor
- Application of Al2O3 Film Prepared by Treatment in Hot Deionized Water