Application of Al2O3 Film Prepared by Treatment in Hot Deionized Water

スポンサーリンク

概要

• 論文の詳細を見る

• An Al2O3 film is applied on metal prepared by treatment in hot deionized (DI) water for multilayer devices. The Al2O3 growth ratio was confirmed three times for Al thickness by focused ion beam (FIB) analysis. Because the interface between the Al2O3 film and the interlayer is weak for the etchant, the shape of the via becomes overhanged by etching and leads a cutting off of the upper metal around the via on/in the interlayer. A method of selective growth for an Al2O3 film is developed using a photoresist with treatment in hot DI water with the aim of not effecting the shape of the via. It was confirmed that the process is effective for protecting the Al surface against hillock formation. Furthermore, characteristics of the devices were improved for reliability by applying this process.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• Asai Makoto

  Omron Corporation, Koka, Siga 528-0074, Japan

• Goto Ryuhei

  Omron Corporation, Koka, Siga 528-0074, Japan

関連論文

• Application of AuSn Adjusting Layer for a Novel Ohmic Back Metal for n-Type Si Devices
• Application of Al2O3 Film Prepared by Treatment in Hot Deionized Water

スポンサーリンク