Application of AuSn Adjusting Layer for a Novel Ohmic Back Metal for n-Type Si Devices

概要

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In this paper, we present a novel ohmic back metal for n-type Si devices. Using an AuSn adjusting layer, a simple and low-cost process is provided, as well as assuring strong adhesion between the metal and the Si substrate. The thickness of the Au layer under the AuSn layer for adjusting the Sn concentration at the interface between the metal and the Si substrate, and the deposition temperature are optimized. A novel back metal is deployed as a good substitute for the conventional AuSb back metal. The eutectic melting ratio (Au 80 wt %, Sn 20 wt %) of the AuSn alloy is confirmed by focused ion beam (FIB) and energy dispersive X-ray spectrometry (EDX). A good ohmic characteristic is obtained upon Sn diffusion to the Au layer. This method is useful for the metallization of various devices owing to its simple and low cost process and its high performance.
2012-01-25