Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
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概要
- 論文の詳細を見る
Germanium oxide (GeOx) films were used as a removing layer in order to transfer thin-film electrical circuits to foreign plastic substrates. GeO2 films were formed by sputtering with mixed gases of oxygen and argon at room temperature. They were rapidly removed at an etching rate of 1000 nm/s by a hydrochloric acid solution with a pH of 0.1 at room temperature and also removed at 700 nm/s by hot water at 70°C. Using GeO2 layers, the transfer of a hydrogenated amorphous silicon layer with Al electrodes to plastic films was demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Sameshima Toshiyuki
Tokyo A&t University
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Sameshima Toshiyuki
Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan
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Takechi Kazushige
TRADIM, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Yoshioka Kazuya
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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