Pulsed Laser Annealing of Thin Silicon Films
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概要
- 論文の詳細を見る
The 30 ns pulsed XeCl excimer laser annealing of silicon films with an average thickness of 2.2 nm formed on quartz substrates is reported. Crystallization occurred at laser energies between 150 and 170 mJ/cm2. Raman scattering spectra revealed the mixed states of small crystalline grains, and nanocrystalline and disordered amorphous regions. The amorphization of the silicon films was observed for laser irradiation above 180 mJ/cm2. Photoluminescence was observed around at approximately 3 and 2 eV from 18 to 130 K for the films annealed at 260 °C for 3 h in $1.3 \times 10^{6}$ Pa H2O vapor after laser irradiation at 170 mJ/cm2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Watakabe Hajime
Tokyo University Of Agriculture And Technology
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Sameshima Toshiyuki
Tokyo A&t University
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Andoh Nobuyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Andoh Nobuyuki
Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan
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Sameshima Toshiyuki
Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan
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Higashi Seiichiro
Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Watakabe Hajime
Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan
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