Electrical Properties of Pulsed Laser Crystallized Silicon Films
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概要
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Electrical properties of phosphorus-doped laser-crystallized silicon films were investigated. The analysis of free carrier optical absorption revealed that crystalline grains formed at laser energies of 360-375 mJ/cm^2 had high career mobilities of 40-50cm^2/Vs, which were close to that of doped single crystalline silicon. The mobility did not depend on the number of laser pulses. On the other hand, Hall effect measurements showed a marked increase in the carrier mobility of electrical current traversing grain boundaries from 3 to 28 cm^2/Vs as the laser energy density increased from 160 to 375 mJ/cm^2. The Hall mobility also increased as the number of laser pulses increased, although a single pulse irradiation resulted in a maximum carrier mobility of 15 cm^2/Vs. These results suggest that a high laser energy density as well as numbers of multiple pulses are necessary to reduce disordered amorphous states and improve grain boundary properties.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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HIGASHI Seiichiro
Seiko Epson Corporation, Technology Platform Research Center
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Saitoh Keiko
Tokyo University Of Agriculture & Technology
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Sameshima Toshiyuki
Tokyo A&t University
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KONDO Michio
Electrotechnical Laboratory
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AOYAMA Naho
Tokyo University of Agriculture & Technology
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Aoyama Naho
Tokyo University Of Agriculture & Technology
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Higashi Seiichiro
Seiko Epson Corporation
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