MATSUDA Akihisa | Electrotechnical Laboratory

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著作論文

Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence
Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
Anomalous Optical and Structural Properties of B-Doped a-Si:H
Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
Boron Doping of Hydrogenated Silicon Thin Films
^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
SiH_3 Radical Density in Pulsed Silane Plasma
Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon
Electrical Properties of Pulsed Laser Crystallized Silicon Films
Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques
Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
Influence of Power-Source Frequency on the Properties of GD a-Si:H
Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
Control of defect density in a-Si : H by surface processes
Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane

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