Kondo Masafumi | Central Research Laboratories Charp Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on Facets
Highly Reliable 150 mW CW Operation of Single-Stripe AlGaAs Lasers with Window Grown on Facets
Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells
Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells
Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
Deviation Characteristics of Elliptical Laser Gaussian Beamson Optical Head
Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate

もっと見る

スポンサーリンク