LPE Growth of In<1-x>Ga_xP_<0.96>As_<0.04>on GaAs Substrate by Two-Phase Melt Method.
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Kondo Masafumi
Central Research Laboratories Charp Corporation
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
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KONDO Masahiko
Faculty of Engineering Science, Osaka University
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TSUSHI Akihito
Faculty of Engineering Science, Osaka University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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KARIYA Tetsuya
Faculty of Science, Kochi University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Faculty Of Engineering Kobe University
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Kondo Masaki
Optical-device Laboratories Sharp Corporation
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Kondo M
Research Initiative For Thin Film Silicon Solar Cells National Institute Of Advanced Industrial Scie
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Kondo M
National Inst. Advanced Ind. Sci. And Technol. (aist) Ibaraki Jpn
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Shirakata Sho
Faculty Of Engineering Ehime University
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Kariya T
Faculty Of Science Kochi University
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Kariya Tetsuya
Faculty Of Science Kochi University
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Tsushi Akihito
Tokyo Research Laboratory Mitsubishi Rayon Co. Ltd.
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Kato T
Yamanashi Univ. Kofu Jpn
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Kondo Masahiko
Faculty Of Agriculture Shimane University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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