Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon

概要

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A study of the exciton two-electron luminescence from phosphorus-dopedsilicon has been made, particularly on the P. luminescence bands which werepreviously explained by free-exciton two-electron transition processes. Thedetailed temperature and impttrity-concentration dependence data have revealedsome new features showing that the P? luminescence originates from recombina-tion of bound excitons in excited states rather than that of free excitons in thevicinity of phosphorus donors. The analyses of the data have led to the newinterpretation that the P. luminescence bands are due to another type of two-electron recombination process in which bound excitons in excited states radia-tively decay, leaving the donor electron in the IS(T.) excited valley-orbit state.
社団法人日本物理学会の論文
1978-02-15