High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device : B-2: GaAs FET/LED AND DETECTOR
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Okamoto Kenji
Faculty Of Engineering Yamanashi University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Okamoto Kenji
Faculty Of Engineering Science Osaka University
関連論文
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- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
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- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
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- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
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- Observation of a New Chromium-Related Complex in GaAs:Cr
- Effects of In Doping on Cr-Related Luminescence in GaAs
- Electronic Polarizabilities of Cations and Anions in II-IV Compounds
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- Low Temperature Electro-Reflectance Spectra of Germanium in Spectral Region from 0.7 to 2.6 eV
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- On the Higher Interband Electro-Reflectance Structure Observed around 3.37 eV in GaSe
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