A Study on LPE Growth of IN_<1-x>Ga_xP<1-y>As_y(y≃0) on (100) GaAs Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-07-20
著者
-
Kondo Masafumi
Central Research Laboratories Charp Corporation
-
HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
-
Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
-
SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
-
KONDO Masahiko
Faculty of Engineering Science, Osaka University
-
TSUSHI Akihito
Faculty of Engineering Science, Osaka University
-
NISHINO Taneo
Faculty of Engineering Science, Osaka University
-
Nishino T
Mie Univ. Tsu Jpn
-
Nishino Taneo
Faculty Of Engineering Kobe University
-
Kondo Masaki
Optical-device Laboratories Sharp Corporation
-
Kondo M
Research Initiative For Thin Film Silicon Solar Cells National Institute Of Advanced Industrial Scie
-
Kondo M
National Inst. Advanced Ind. Sci. And Technol. (aist) Ibaraki Jpn
-
Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
-
Shirakata Sho
Faculty Of Engineering Ehime University
-
Tsushi Akihito
Tokyo Research Laboratory Mitsubishi Rayon Co. Ltd.
-
Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
-
Kondo Masahiko
Faculty Of Agriculture Shimane University
関連論文
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
- Silicon Wafer Direct Bonding through the Amorphous Layer
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
- Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Optical Absorption Edge of Layer Compound InS Grown from In Melt
- Amorphous Si : H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
- Characterization of Film and Junction Qualities in a-Si Solar Cells : C-5: SOLAR CELLS
- Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption Method
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Diffusion Profiles of Cd in InP
- Photoluminescence Measurements for Cd-Diffused InP p-n Junction
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
- Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
- Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
- Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
- Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
- Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
- A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
- Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
- Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
- Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
- Impurity Electroabsorption of GaAs
- Exciton Electroabsorption in Germanium Single Crystal
- High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on Facets
- Highly Reliable 150 mW CW Operation of Single-Stripe AlGaAs Lasers with Window Grown on Facets
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Design Parameters of a-Si:H High-Voltage Photovoltaic Cells : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Temperature Dependence of Thermoabsorption Spectrum of Lead Sulphide
- Electro- and Thermo-Reflectance of Lead Selenide Single Crystal
- Epitaxial Growth of PLZT Single Crystal Film on SrTiO_3 by RF Sputtering
- An Enhancement of Photochromic Effect by Multi-Reflection Scattering in Fe-Doped PLZT
- Ferroelectric PLZT Thin Films Fabricated by RF Sputtering
- Electronic Polarizabilities of Transition Metal Ions and Rare-Earth Ions in II-VI Semiconductors
- Kinetics of Plasma Deposition of a-Si:H Films
- Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
- Tunneling Current Due to Thermionic-Field Emission in an Au-InS Schottky-Barrier Diode
- High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device : B-2: GaAs FET/LED AND DETECTOR
- Electroluminescence in ZnS_Te_x:CeF_3 Thin-Film Devices Prepared in Oxygen Atmosphere
- Recent Progress of the Amorphous Silicon Solar Cell Technology : C-5: SOLAR CELLS
- Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
- Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells
- Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells
- Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
- Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
- Deviation Characteristics of Elliptical Laser Gaussian Beamson Optical Head
- Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
- A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
- Preparation and Properties of InS Single Crystals
- Observation of a New Chromium-Related Complex in GaAs:Cr
- Effects of In Doping on Cr-Related Luminescence in GaAs
- On the Bound-Exciton Luminescence from Highly Doped Silicon
- 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Thermal and Electric Field Broadening in Electro-Optical Effect
- Electroreflectance in GaAs near the Fundamental Edge at 25°K
- Electronic Polarizabilities of Isoelectronic Impurities in II-VI Compounds
- Anion Vacancy States in the Insulator-ZnS Interface
- A Model for Emissions from ZnS:Ce^ and SrS:Ce^ Thin-Film Electroluminescent Devices
- Hall-Effect Measurement on Polycrystalline SnO_2 Thin Films : Electrical Properties of Condensed Matter
- Deep-Level Luminescence of Cr-Doped GaAsP Alloys
- Deep-Level Luminescence in Ni-Diffused GaAs