Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption Method

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-08-20

著者

• OKAMOTO Hiroaki

  Faculty of Engineering Science, Osaka University

• HAMAKAWA Yoshihiro

  Faculty of Engineering Science, Osaka University

• Okamoto Hiroaki

  Faculty Of Engineering Science Osaka University

• NONOMURA Shuichi

  Faculty of Engineering Science, Osaka University

• Nonomura Shuichi

  Faculty Of Engineering Science Osaka University

• Hamakawa Yoshihiro

  Faculty Of Engineering Osaka University

関連論文

• Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
• Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
• Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
• Silicon Wafer Direct Bonding through the Amorphous Layer
• LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
• Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
• Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
• Deep Impurity Levels in InP LEC Crystals
• Bound Multiexciton Luminescence in Lithium-Doped Silicon
• Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
• Bandgap Energy of InGaAsP Quaternary Alloy
• Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
• Observation of Deep Impurity Levels in In_GA_As_P_
• Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
• Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
• Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
• Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
• Optical Absorption Edge of Layer Compound InS Grown from In Melt
• Amorphous Si : H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
• Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
• Characterization of Film and Junction Qualities in a-Si Solar Cells : C-5: SOLAR CELLS
• Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
• A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
• Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
• Determination of the Built-in Potential in a-Si Solar Cells by Means of Electroabsorption Method
• Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
• Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
• X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
• Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
• Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
• Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
• Diffusion Profiles of Cd in InP
• Photoluminescence Measurements for Cd-Diffused InP p-n Junction
• Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
• Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
• Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
• Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
• Ferroelectric Properties of RF Sputtered PLZT Thin Film
• Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
• Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
• Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
• Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
• A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
• Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
• Impurity Electroabsorption of GaAs
• Exciton Electroabsorption in Germanium Single Crystal
• Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
• Design Parameters of a-Si:H High-Voltage Photovoltaic Cells : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Temperature Dependence of Thermoabsorption Spectrum of Lead Sulphide
• Electro- and Thermo-Reflectance of Lead Selenide Single Crystal
• Epitaxial Growth of PLZT Single Crystal Film on SrTiO_3 by RF Sputtering
• An Enhancement of Photochromic Effect by Multi-Reflection Scattering in Fe-Doped PLZT
• Ferroelectric PLZT Thin Films Fabricated by RF Sputtering
• Electronic Polarizabilities of Transition Metal Ions and Rare-Earth Ions in II-VI Semiconductors
• Kinetics of Plasma Deposition of a-Si:H Films
• Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
• Tunneling Current Due to Thermionic-Field Emission in an Au-InS Schottky-Barrier Diode
• High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device : B-2: GaAs FET/LED AND DETECTOR
• Electroluminescence in ZnS_Te_x:CeF_3 Thin-Film Devices Prepared in Oxygen Atmosphere
• Recent Progress of the Amorphous Silicon Solar Cell Technology : C-5: SOLAR CELLS
• Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
• Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
• Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
• Amorphous-Silicon Photovoltaic X-Ray Sensor
• Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
• A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
• Preparation and Properties of InS Single Crystals
• Observation of a New Chromium-Related Complex in GaAs:Cr
• Effects of In Doping on Cr-Related Luminescence in GaAs
• Electronic Polarizabilities of Cations and Anions in II-IV Compounds
• On the Bound-Exciton Luminescence from Highly Doped Silicon
• 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
• Thermal and Electric Field Broadening in Electro-Optical Effect
• Electroreflectance in GaAs near the Fundamental Edge at 25°K
• Electronic Polarizabilities of Isoelectronic Impurities in II-VI Compounds
• Anion Vacancy States in the Insulator-ZnS Interface
• A Model for Emissions from ZnS:Ce^ and SrS:Ce^ Thin-Film Electroluminescent Devices
• Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
• Hall-Effect Measurement on Polycrystalline SnO_2 Thin Films : Electrical Properties of Condensed Matter
• Deep-Level Luminescence of Cr-Doped GaAsP Alloys
• Deep-Level Luminescence in Ni-Diffused GaAs
• Dislocation Deny Zone around the Grain Boundary of Silicon Bicrystals
• A Method of Measuring Differential Photovoltage Spectrum at Schottky Barrier
• Electrical and Optical Properties of Si-SnO_2 Heterojunctions
• Semiconducting and Dielectric Properties of C-Axia Oriented SbSI Thin Film
• High Electric Field Effects in Germanium p-n Junction
• Indirect Exciton Absorption in Germanium
• Low Temperature Electro-Reflectance Spectra of Germanium in Spectral Region from 0.7 to 2.6 eV
• Barrier Temperature at Turnover in Germanium p-n Junction
• On the Higher Interband Electro-Reflectance Structure Observed around 3.37 eV in GaSe
• Photoluminescence and Lattice Mismatch in InGaAs/InP
• Cr-Related Intracenter Luminescence in GaAs: Cr
• Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction
• Reversible Photo-Induced Structural Change in Hydrogenated Amorphous Silicon
• Epidemiological Analysis of Degradation in Silicon Photovoltaic Modules
• Effects of Hydrogen Passivation for Spherical Silicon Solar Cells Fabricated by Dropping Method
• Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
• Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
• Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si

もっと見る 閉じる

スポンサーリンク