Cr-Related Intracenter Luminescence in GaAs: Cr
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概要
- 論文の詳細を見る
The 0.839eV C-related intracenter luminescence has been investigated using various kinds of Cr-doped and Cr-diffused GaAs. It has been found that the luminescence intensity increases monotonously with the Cr content involved in GaAs but is not linear to the Cr content. This result suggests that the luminescence arises from a complex involving Cr and another defect or impurity. The spectral shape of luminescence is independent of the majority donor impurities contained in GaAs, but the intensity decreases with increase of arsenic pressure during the Cr diffusion. These results indicated that the Cr-related luminescence line at 0.839eV in GaAs: Cr is associated with a complex of Cr and As-vacancy.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Nishino Taneo
Faculty Of Engineering Kobe University
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FUJIWARA Yasufumi
Faculty of Engineering Science, Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Fujiwara Y
Univ. Tokyo Tokyo
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