In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
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概要
- 論文の詳細を見る
The in-depth profiles of two kinds of Cr-related deep luminescence centers, Cr-V_<As> and Cr-Te, in Cr-diffused GaAs crystals were determined from luminescence measurements at 4.2 K. The Cr-V_<As> center gave a steeper in-depth profile than the Cr-Te center. Analysis of these in-depth profiles of the Cr-V_<As> and Cr-Te centers has enabled us to estimate the diffusion coefficient of the Cr impurity and the arsenic vacancy V_<As>, in GaAs crystals. The values obtained are 2〜4×10^<-11> cm^2/s for Cr and 5〜8×10^<-12> cm^2/s for V_<As>, comparable to previously-reported data. A steep decrease in the luminescence intensities of the Cr-related lines at the surface of the samples was also observed, suggesting the existenceof residual strain.
- 社団法人応用物理学会の論文
- 1985-11-20
著者
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
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KOJIMA Atsushi
Department of Orthopaedic Surgery, St. Marianna University School of Medicine
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Kojima A
Gunma National Coll. Technol. Maebashi Jpn
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Kojima A
Quantum 14 Co. Ltd.
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Kojima Atsushi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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FUJIWARA Yasufumi
Department of Materials Science and Engineering, Nagoya University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Fujiwara Y
Univ. Tokyo Tokyo
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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