Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
スポンサーリンク
概要
- 論文の詳細を見る
Energy states of oxygen-excess defects in SiO2 have been studied by theoretical analyses using molecular orbital calculation and discussed on the basis of comparison with photoluminescence of SiO2 thin films. Theoretical analyses have been carried out using both the semi-empirical and ab-initio methods, and have shown that the transition energy from the excited singlet state to the ground state is 2.32 eV with the STO-3G basis set and 2.40 eV with the 3-21G basis set, which are very close to the 2.4 eV photoluminescence peak measured in the photo induced chemical vapor deposition SiO2 thin film. This analysis and the effects of annealing in O2 and N2 atmospheres suggest that origin of the photoluminescence peak at 2.4 eV is oxygen-excess defect.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
-
Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
-
KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
-
Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Okuyama Masanori
Faculty Of Engineering Science Osaka University
-
Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
-
Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
-
Okuyama M
Osaka Univ. Osaka Jpn
-
Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
- Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
- Reduction in Dislocation Density of Spherical Silicon Solar Cells Fabricated by Decompression Dropping Method
- Antireflective Coating Design of Spherical Silicon Solar Cell with Reflector Cup by Ray-Tracing Simulation
- Defect Evaluation of Spherical Silicon Solar Cells Fabricated by Dropping Method
- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
- Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
- Nanoimprint Lithography Using Novolak Photoresist and Soft Mold at Room Temperature
- Lateral Graphoepitaxy of Germanium Controlled by Microholes on SiO_2 Surface
- Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
- A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Excitation Mechanism of Electroluminescent ZnS Thin Films Doped with Rare-Earth Ions
- Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices
- The Electron Injection Mechanism of the Electroluminescent ZnS : Tb^ Films
- Voltage Dependence of Light Emission of the Electroluminescent Ta-Ta_2O_5-ZnS:Tb^-Au Thin Films
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electrical Conduction in Germanium Grain Boundary Plane
- Kinetics of Plasma Deposition of a-Si:H Films
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- Franz-Keldysh Effect in Silicon P-N Junction
- Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals
- Paint-on-diffusant SnO_2/n^+-p Si Heteroface Solar Cell : I-4: SILICON SOLAR CELLS AND SYSTEMS
- Thin Film DC EL Cell of Au/ZnSe:Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Nanoimprint Lithography Using Novolak-Type Photoresist and Soft Mold at Room Temperature
- Lateral Graphoepitaxy of Germanium Controlled by Microstructures on SiO_2 Surface
- Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Spectroscopic Laser Scanning Analysis of Photo-Induced Current on a-Si Solar Cells
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Electrooptical Signal at the Anisotropic Saddle Point