High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-02-15
著者
-
Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
-
Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Okuyama Masanori
Faculty Of Engineering Science Osaka University
-
Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
-
Okuyama M
Osaka Univ. Osaka Jpn
-
MATSUI Yuichi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
MIYAGAWA Yasuo
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
IZUMITANI Junko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
Muto Y
The Institute For Materials Research Tohoku University
-
Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
-
Izumitani Junko
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Miyagawa Yasuo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
- Characterization of a-SiC : H as a Window Material for p-i-n a-Si Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Study of Drift Type Photovoltaic Effect in Amorphous Silicon p-i-n Junction Structure : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method
- Reduction in Dislocation Density of Spherical Silicon Solar Cells Fabricated by Decompression Dropping Method
- Antireflective Coating Design of Spherical Silicon Solar Cell with Reflector Cup by Ray-Tracing Simulation
- Defect Evaluation of Spherical Silicon Solar Cells Fabricated by Dropping Method
- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
- Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System
- Nanoimprint Lithography Using Novolak Photoresist and Soft Mold at Room Temperature
- Lateral Graphoepitaxy of Germanium Controlled by Microholes on SiO_2 Surface
- Research and Development of a 100-kWp Photovoltaic Power Generation System for a Factory
- A Study of Optimum Operation by Voltage Mode Control for Solar Photovoltaic Systems
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Excitation Mechanism of Electroluminescent ZnS Thin Films Doped with Rare-Earth Ions
- Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices
- The Electron Injection Mechanism of the Electroluminescent ZnS : Tb^ Films
- Voltage Dependence of Light Emission of the Electroluminescent Ta-Ta_2O_5-ZnS:Tb^-Au Thin Films
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electrical Conduction in Germanium Grain Boundary Plane
- Kinetics of Plasma Deposition of a-Si:H Films
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- Franz-Keldysh Effect in Silicon P-N Junction
- Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals
- Paint-on-diffusant SnO_2/n^+-p Si Heteroface Solar Cell : I-4: SILICON SOLAR CELLS AND SYSTEMS
- Thin Film DC EL Cell of Au/ZnSe:Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Nanoimprint Lithography Using Novolak-Type Photoresist and Soft Mold at Room Temperature
- Lateral Graphoepitaxy of Germanium Controlled by Microstructures on SiO_2 Surface
- Supplementary-Light Method for Measuring the Conversion Efficiency of Multijunction Solar Cells
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Spectroscopic Laser Scanning Analysis of Photo-Induced Current on a-Si Solar Cells
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Electrooptical Signal at the Anisotropic Saddle Point