Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method

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概要

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• SrBi2Ta2O9 thin films are prepared on both Pt sheet and Si wafer by the laser ablation method using an ArF excimer laser below 500°C. Crystallographic properties of the film are characterized with substrate temperature (T s) and O2 gas pressure as parameters. SrBi2Ta2O9 thin films are oriented preferentially to (105) on both Pt sheet and Si wafer. X-ray photoelectron spectra (XPS) depth profile reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on the Si wafer. The films deposited on Pt and Si consist of spherical grains of about 250 and 200 nm diameter, respectively. A good capacitance-voltage (C–V) hysteresis curve is obtained in the metal oxide semiconductor (MOS) structure of the SrBi2Ta2O9 film on SiO2/Si at T s of 500°C.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Hamakawa Yoshihiro

  Faculty Of Science And Engineering Ritsumeikan University

• Hamakawa Yoshihiro

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• OKUYAMA Masanori

  Department of Electrical Engineering, Facully of Engineering Science, Osaka University

• Okuyama Masanori

  Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University

• Okuyama Masanori

  Faculty Of Engineering Science Osaka University

• Okuyama M

  Osaka Univ. Osaka Jpn

• Hamakawa Y

  Faculty Of Science And Engineering Ritsumeikan University

• Oishi Yoshihiro

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Hamakawa Yoshihiro

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Wu Wenbiao

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Fumoto Keigo

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Fumoto Keigo

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Wu Wenbiao

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

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