PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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OHTANI Kohzo
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Ohtani Kohzo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
関連論文
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- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Strained SrTiO_3/ BaTiO_3 Superlattices Formed by Laser Ablation Technique and Their High Dielectric Properties
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Electric and Pyroelectric Behaviors of PbTiO_3 Thin Films Formed by an Excimer Laser Ablation Technique
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
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- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- (111) Preferred Oriented Pb(Zr, Ti)O_3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- 速報 Highly Oriented Pb(Zr,Ti)O3 Films Prepared by Multi-step Process
- Preparation and Basic Properties of SrBi_2Ta_2O_9 Films
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Excitation Mechanism of Electroluminescent ZnS Thin Films Doped with Rare-Earth Ions
- Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices
- The Electron Injection Mechanism of the Electroluminescent ZnS : Tb^ Films
- Voltage Dependence of Light Emission of the Electroluminescent Ta-Ta_2O_5-ZnS:Tb^-Au Thin Films
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electrical Conduction in Germanium Grain Boundary Plane
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- Franz-Keldysh Effect in Silicon P-N Junction
- Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals
- Paint-on-diffusant SnO_2/n^+-p Si Heteroface Solar Cell : I-4: SILICON SOLAR CELLS AND SYSTEMS
- Thin Film DC EL Cell of Au/ZnSe:Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Spectroscopic Laser Scanning Analysis of Photo-Induced Current on a-Si Solar Cells
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Ferroelectric Properties of Bi1.1Fe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N2 and O2
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Analysis of Switching in Perovskite Ferroelectrics on the Tetragonal Side of the Morphotropic Phase Boundary Using a Landau-Theory-Based : Electrical Properties of Condensed Matter
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- An Analysis of Nonvolatile Polarized Memory of Semiconductor-Ferroelectric Heterostructure Junction
- Electrooptical Signal at the Anisotropic Saddle Point
- Some Relationships between Modulated Energy Parameter Spectra in One-, Two- and Three-Dimensional Crystals
- Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
- SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
- Micromachined Arrayed Capacitive Ultrasonic Sensor/Transmitter with Parylene Diaphragms
- (111) Preferred Oriented Pb(Zr,Ti)O3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- Infrared Characterization of Interface State Reduction by F_2 Treatment in SiO_2/Si Structure using Photo-CVD SiO_2 Film
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Development of Capacitive Ultrasonic Sensor with Parylene Diaphragm Using Micromachining Technique
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Improvement of Field-Induced Electron Emission Using Ir or IrO2 Electrode and Ferroelectric Film Coating
- Sensitivity of Ultrasonic Sensor Structures Having Multilayer Diaphragm Structure
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy