Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
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概要
- 論文の詳細を見る
An attempt has been made on a low-temperature photo-induced chemical vapor deposition of SiO_2 thin films by direct excitation without Hg sensitization under irradiation of a deuterium lamp having high energy photons. The film growth has been confirmed at 84℃ and the substrate temperature for a considerably good film quality was above 170℃. The deposition rates and the refractive indices of the films deposited above about 170℃ are about 100 Å/min and 1.44-1.46, respectively. Infrared absorption peaks related with Si-H bonding don't appear in the photo-CVD film deposited above 175℃, but appear in the thermal CVD film deposited at 175℃.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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TOYODA Yukio
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Toyoda Y
Chubu Univ. Aichi Jpn
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TOYODA Yoshihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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