Highly Oriented Polycrystalline Si Film on Quartz Grown from Si3H8 by Thermal and Photo-CVD

概要

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Si films deposited on quartz plates grown from Si3H8 by thermal and photo-CVD have shown a strong crystalline orientation and are preferentially grown as (110) planes at substrate temperatures below 560°C, but turn to (100) above 575°C. In the transition region, an enhancement of $\langle 100\rangle$-orientation occurs with increasing H2 partial pressure and Si3H8 flow rate, but $\langle 110\rangle$-orientation occurs at extremely high H2 pressure and Si3H8 flow rates. Surface morphologies have also been investigated, and pyramidal texture, dome like structure and random roughness are found in $\langle 100\rangle$- and $\langle 110\rangle$-oriented films and non oriented crystalline film, respectively. The mechanism of the preferred orientation is discussed, taking into consideration the bonding structure of the crystal plane and that of decomposed species in the vicinity of the surface.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-05-20