Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL Cell
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概要
- 論文の詳細を見る
Pulse-excited response of the electroluminescence and its concentration dependence of luminescent center have been investigated in order to clarify the electroluminescent mechanism of Au/ZnSe : Mn/n-GaAs heterostructure cell. The best record obtained from ZnSe : Mn phosphor film cell shows 31 mlm/W in luminous efficiency and 230 fL in brightness under the dc excitation condition of 20 V and 10 mA. The relaxation time is estimated from brightness wave forms to be 17.5 μs for Mn-F complex center, while that of Mn^<2+> ion center varies from 140 to 20 μs with increase of Mn content. The experimental data show that two processes exist of a carrier injection through the interface states and the electron flowing over the heterojunction barrier.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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OHNISHI Hideomi
Department of Electronics Engineering, Faculty of Engineering, Ehime University
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Ohnishi Hideomi
Department Of Electrical And Electronic Engineering Ehime University
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