Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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Okada N
Nec Corp. Kanagawa Jpn
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Okada N
Honda Electronics Co. Ltd. Toyohashi Jpn
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Okada Norio
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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MAIDA Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Okada Nagaya
Research Institute Of Electronics Shizuoka University:(present Address) Honda Electronics Co.
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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