Ferroelectric Gate FET Memory based on Conduction of SBT-Silicon Oxide Interface
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概要
- 論文の詳細を見る
- 2007-07-10
著者
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Lee Bong-yeon
Osaka University
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OKUYAMA Masanori
Osaka Prefecture SEIS Project
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Kanashima Takeshi
Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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MINAMI Takaaki
Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Osaka University
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