Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Yamamoto Hideaki
Department of Regulation Biology, Faculty of Science, Saitama University
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Yamamoto Hideaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Okuyama M
Osaka Univ. Osaka Jpn
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Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
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Iwasaki Shinya
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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OKUMURA Katsuhide
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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IWASAKI Sinya
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okumura Katsuhide
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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