Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-09-30
著者
-
Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
-
Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Okuyama Masanori
Faculty Of Engineering Science Osaka University
-
Okuyama M
Osaka Univ. Osaka Jpn
-
ASANO Jun-ichi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
IWASAKI Shin-ya
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
-
Iwasaki S
Himeji Inst. Technol. Hyogo Jpn
-
Asano Jun-ichi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Iwasaki Shin-ya
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si