Bi_4Ti_3O_<12> Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Okuyama M
Osaka Univ. Osaka Jpn
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Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
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Oishi Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Wu Wenbiao
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University,
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Fumoto Keigo
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University,
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Fumoto Keigo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Wu Wenbiao
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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