Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-01-05
著者
-
Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
-
Umeno M
Fukui Univ. Technol. Fukui Jpn
-
NISHINO Taneo
Institute of Natural Science, Kobe University
-
YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
KAWABE Hideaki
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
NAKAYAMA Hiroshi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
Kawabe H
Tatsuta Electric Wire & Cable Co. Ltd. Osaka
-
Kawabe Hideaki
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Yasutake K
Osaka Univ. Osaka
-
Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
-
Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
-
Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
-
Kawabe H
Osaka Polytechnic College
-
Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Yasutake K
Graduate School Of Engineering Osaka University
-
Nishino T
Kobe Univ. Kobe Jpn
-
Nakayama Hiroshi
Department Of Electrical Engineering Faculty Of Engineering Himeji Institute Of Technology
-
Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
-
Nakayama Hiroshi
Department of Applied Physics, Osaka City University, Osaka 558-8585
関連論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
- Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Optical Absorption Edge of Layer Compound InS Grown from In Melt
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Excitation Mechanism of Electroluminescent ZnS Thin Films Doped with Rare-Earth Ions
- Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices
- The Electron Injection Mechanism of the Electroluminescent ZnS : Tb^ Films
- Voltage Dependence of Light Emission of the Electroluminescent Ta-Ta_2O_5-ZnS:Tb^-Au Thin Films
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electrical Conduction in Germanium Grain Boundary Plane
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- Franz-Keldysh Effect in Silicon P-N Junction
- Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals
- Paint-on-diffusant SnO_2/n^+-p Si Heteroface Solar Cell : I-4: SILICON SOLAR CELLS AND SYSTEMS
- Thin Film DC EL Cell of Au/ZnSe:Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Electron-Beam Electroreflectance Spectroscopy of Semiconductors
- Theoretical Analysis of Photoacoustic Displacement for Inhomogeneous Materials
- A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe : Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
- Photoluminescence and Photoreflectance Study of Electronic Structure in Pseudomorphic n-AlGaAs/InGaAs/GaAs
- Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
- A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Spectroscopic Laser Scanning Analysis of Photo-Induced Current on a-Si Solar Cells
- Observation of a New Chromium-Related Complex in GaAs:Cr
- Effects of In Doping on Cr-Related Luminescence in GaAs
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Thermal and Electric Field Broadening in Electro-Optical Effect
- Electroreflectance in GaAs near the Fundamental Edge at 25°K
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Deep-Level Luminescence of Cr-Doped GaAsP Alloys
- Deep-Level Luminescence in Ni-Diffused GaAs
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Electrooptical Signal at the Anisotropic Saddle Point
- Photoluminescence and Lattice Mismatch in InGaAs/InP
- Cr-Related Intracenter Luminescence in GaAs: Cr
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films