Yasutake K | Graduate School Of Engineering Osaka University

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概要

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著作論文

Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
Oxygen-Related Donors Generated at 800℃ in CZ-Si
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition (Special issue: Solid state devices and materials)
Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
Fracture of GaAs Wafers : Mechanical and Acoustical Properties
Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range

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