Fracture of GaAs Wafers : Mechanical and Acoustical Properties

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• UMENO Masataka

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• KAWABE Hideaki

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• Kawabe H

  Tatsuta Electric Wire & Cable Co. Ltd. Osaka

• Kawabe Hideaki

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• Yasutake K

  Osaka Univ. Osaka

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Kawabe H

  Osaka Polytechnic College

• ADACHI Kaoru

  Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University

• Yasutake K

  Graduate School Of Engineering Osaka University

• YOSHII Kumayasu

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• KONISHI Yoshito

  Department of Precision Engineering, faculty of Engineering, Osaka University

• Adachi Kaoru

  Department Of Organic And Polymeric Materials Tokyo Institute Of Technology

• Adachi Kaoru

  Department Of Precision Engineering Faculty Of Engineering Osaka University

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
• Vacuum Ultraviolet Light Source Using Electrodeless Discharge
• Vacuum Ultraviolet Detector
• Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
• Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
• Oxygen-Related Donors Generated at 800℃ in CZ-Si
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
• Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
• Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
• Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
• Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
• Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
• In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
• Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
• Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
• Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
• Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
• Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Light Source System for Ruby Laser
• Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
• Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
• Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
• Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
• Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
• Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
• Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
• High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
• High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
• Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
• Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
• Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
• Fracture of GaAs Wafers : Mechanical and Acoustical Properties
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• The Diffusion Study Titanium-Silver System
• Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
• Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• MOCVD Growth of InP Using Red-Phosphorus and Hydrogen Plasma
• Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
• Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
• Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
• Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

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